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https://irlib.pccu.edu.tw/handle/987654321/2704
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| Title: | Light emission and negative differential conductance of n-type nanoporous silicon with buried p-layer assistance |
| Authors: | Lin, Jia-Chuan;Tsai, Wei-Chih;Chen, Wei-Lun |
| Contributors: | 材料所 |
| Date: | 2007 |
| Issue Date: | 2009-11-16 10:32:39 (UTC+8) |
| Abstract: | The light-emission and current-voltage properties of n-type nanoporous silicon (n-NPS) with a hole assistance of buried p layer are explored. The influences of anodic current density on the formation, morphology, and properties of n-NPS are measured. Such n-NPS films have nanoscaled pores and high-aspect-ratio pillars. Since the anisotype junction is forward biased during the anodization process, many holes can drift straightupward from p layer and participate in the electrochemical reaction. At room temperature, high peak-to-valley current ratios of about 117.3 can be obtained in negative difference conductance region as well as strong visible light emissions are clearly observed under ultraviolet excitation.(c) 2007 American Institute of Physics. |
| Relation: | APPLIED PHYSICS LETTERS Volume: 90 Issue: 9 Article Number: 091117 |
| Appears in Collections: | [化學工程與材料工程學系暨碩士班] 期刊論文
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