文化大學機構典藏 CCUR:Item 987654321/2618
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    题名: Electrical properties of pressure quenched silicon by thermal spraying
    作者: Tan, S. Y.
    Gambino, R. J.
    Sampath, S.
    Herman, H.
    贡献者: 電機系
    关键词: plasma spray
    polycrystalline silicon
    electrical properties
    metastable phase silicon
    semiconductor
    日期: 2007
    上传时间: 2009-11-09 10:24:00 (UTC+8)
    摘要: High velocity thermal spray deposition of polycrystalline silicon film onto single crystal substrates, yields metastable high pressure forms of silicon in nanocrystalline form within the deposit. The phases observed in the deposit include hexagonal diamond-Si, R-8, BC-8 and Si-IX. The peculiar attribute of this transformation is that it occurs only on < 100 > orientation silicon substrate. The silicon deposits containing the high pressure phases display a substantially higher electrical conductivity. The resistivity profile of the silicon deposit containing shock induced metastable silicon phases identified by X-ray diffraction patterns. The density of the pressure induced polyrnorphic silicon is higher at deposit/ substrate interface. A modified two-layer model is presented to explain the resistivity of the deposit impacted by the pressure induced polyrnorphic silicon generated by the thermal spraying process. The pressure quenched silicon deposits on the p(-) silicon substrate, with or without metastable phases, display the barrier potential of about 0.72 eV The measured hall mobility value of pressure quenched silicon deposits is in the range of polycrystalline silicon. The significance of this work lies in the fact that the versatility of thermal spray may enable applications of these high pressure forms of silicon. (C) 2007 Elsevier B.V. All rights reserved.
    關聯: THIN SOLID FILMS Volume: 515 Issue: 20-21 Pages: 7744-7750
    显示于类别:[電機工程系] 期刊論文

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