本論文是以Ti、Fe、Co、Ni四種元素依照等莫耳比例配製成TixFeCoNiOy合金靶材，其中的x=0、0.5、1，以高真空直流濺鍍機濺鍍其合金薄膜，再將其薄膜進行真空高溫退火熱處理，放置於真空高溫爐中1000℃-30、60、120、240分鐘，以產生低電阻之TixFeCoNiOy薄膜。本論文在探討初鍍薄膜及退火後薄膜之微結構與電性，再將其薄膜置於陶瓷加熱板上，從室溫加熱至300℃並以不同定電流(1、10、100mA)下分別進行實驗數據擷取，同時觀察溫度與電阻率變化情形。薄膜表面性質分析使用場發射掃瞄式電子顯微鏡(FE-SEM)作表面微結構觀察。
在本論文中TixFeCoNiOy薄膜的電阻率會受到溫度提升之影響。此外，熱電效應會影響這些TixFeCoNiOy薄膜的電阻率;但此種情況只在1mA曲線比較明顯，10與100mA曲線的趨勢幾乎相同，塊材則亦會受到熱電效應之影響。
本論文發現將FeCoNiOy薄膜置於真空高溫爐中施以1000°C-30分鐘的熱處理後有最低電阻值18.34μΩ-cm。低於文獻中TiFeCoNi 的35μΩ-cm[1]與其他陶瓷材料相比，亦低於ITO的電阻(170μΩ-cm)與RuO2氧化物在室溫下的最低電阻(35μΩ-cm)。
In this study, four elements of Ti, Fe, Co and Ni were selected to produce TixFeCoNi (x=0、0.5and 1) alloy targets. These TixFeCoNi thin films were produced by the vacuum DC sputtering technique. Then, these TixFeCoNi thin films were vacuum annealed at 1000°C for 30、60、120 and 240 min,respectively.After that, these TixFeCoNi thin films became to metal oxide films because small amount of air still leaked into the vacuum furnace during annealing. This thesis investigatedthe microstructures and electric properties of as-annealed TixFeCoNi thin films and as-cast bulks. These TixFeCoNiOythin films were also placed on the ceramic heating plate to measure the effect of temperature on the resistivity of these TixFeCoNiOythin films.The microstructures of these TixFeCoNiOy thin films were analyzed by field-emission scanning electron microscope (FE-SEM). The resistivity was measured by four-point probe method.
In this paper, the resultsindicated that the resistivity of the TixFeCoNiOy thin films increased as increasingtemperature. In addition, thermoelectric effect also affectedon on the resistivity of these TixFeCoNiOy thin films, especially the applied current was 1mA.
Results indicatedthelowest resistivity of the alloy oxide thin film was the FeCoNiOy thin film,and it's resistivity was 18.34μΩ-cm after annealed at 1000°C for 30min. This value is not only lower than ITO (150μΩ-cm) and RuO2 single crystal (35μΩ-cm), but also lower than our previous studies on the TixFeCoNiOy thin films.
