Synthesis of SnO2-ZnO Core-Shell Nanowires and Their Optoelectronic Properties

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Title:	Synthesis of SnO2-ZnO Core-Shell Nanowires and Their Optoelectronic Properties
Authors:	Pan, KY (Pan, Ko-Ying) Lin, YH (Lin, Yu-Hung) Lee, PS (Lee, Po-Sheng) Wu, JM (Wu, Jyh-Ming) Shih, HC (Shih, Han C.)
Contributors:	Inst Mat Sci & Nanotechnol
Keywords:	ATOMIC LAYER DEPOSITION PHOTON-SENSING PROPERTIES ZNO NANOWIRES GAS NANORODS SENSORS
Date:	2012
Issue Date:	2013-02-26 10:20:37 (UTC+8)
Abstract:	Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD). The diameter of SnO2-ZnO core-shell nanowires is 100 nm by ALD 200 cycles. The result of electricity measurements shows that the resistance of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 925 Omega, which is much lower than pure SnO2 nanowires (3.6 x 10(6) Omega). The result of UV light test shows that the recovery time of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 328 seconds, which is lower than pure SnO2 nanowires (938 seconds). These results demonstrated that the SnO2-ZnO core-shell nanowires have potential application as UV photodetectors with high photon-sensing properties.
Relation:	JOURNAL OF NANOMATERIALS 文獻號碼: 279245
Appears in Collections:	[Department of Chemical & Materials Engineering] journal articles

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