文化大學機構典藏 CCUR:Item 987654321/24300
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    題名: Dielectric Property Investigation of AlN Ceramics Sintered with Different Additives
    作者: Wu, HM (Wu, Hue-Min)[ 1 ]
    Zheng, YL (Zheng, Yi-Lun)[ 2,3 ]
    Chen, GR (Chen, Ging-Ray)
    貢獻者: Dept Phys
    關鍵詞: Aluminum nitride
    sintering
    dielectric property
    sintering additives
    日期: 2012
    上傳時間: 2013-02-25 14:11:59 (UTC+8)
    摘要: Two kinds of liquid-phase sintering additives, La2O3 and Y2O3, were chosen to achieve the low-temperature sintering process. The relative density and shrinkage at sintering temperatures of 1300 degrees C, 1400 degrees C, and 1500 degrees C respectively were estimated. The observation of microstructures by XRD and SEM reveals that the inhomogeneous phases containing different phase compositions were formed during the sintering. The sintering additives are suggested to increase dielectric constant. However, the La2O3 additive shows no prominent effect on the dielectric loss. We suggest that the effect of aluminate second phase and the microimperfections could play an important role on the dielectric properties of sintered AlN ceramics during sintering below 1500 degrees C.
    關聯: FERROELECTRICS 卷: 435 頁數: 104-109
    顯示於類別:[光電物理系] 期刊論文

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