Applying molecular-level technique to the construction of molecular spin valves is a challenging issue in organic spintronics, in which the magnetoresistive performance is highly sensitive to the device's local contact geometry. Here, we propose a molecular spin-valve design of large-area molecular junction to reduce the geometrical impact. Room-temperature tunneling magnetoresistance and well-defined parallel/antiparallel states are achieved in the spin valve with a molecular spacer. The results hold promise for the development of future molecular-level nonvolatile electronic devices. (C) 2012 The Japan Society of Applied Physics
