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| 題名: | Ultrahigh-Density beta-Ga2O3/N-doped beta-Ga2O3 Schottky and p-n Nanowire Junctions: Synthesis and Electrical Transport Properties |
| 作者: | Chang, LW (Chang, Li-Wei)
Li, CF (Li, Ching-Fei)
Hsieh, YT (Hsieh, Yun-Tsung)
Liu, CM (Liu, Chia-Ming)
Cheng, YT (Cheng, Yi-Ting)
Yeh, JW (Yeh, Jien-Wei)
Shih, HC (Shih, Han C.) |
| 貢獻者: | Dept Chem & Mat Engn |
| 關鍵詞: | GALLIUM NITRIDE NANOWIRES
LIGHT-EMITTING-DIODES
OXIDE NANOWIRES
GA2O3 NANOWIRES
THIN-FILMS
SILICON
DEVICE
FABRICATION
PHOTODETECTORS
LUMINESCENCE |
| 日期: | 2011 |
| 上傳時間: | 2013-02-18 13:18:37 (UTC+8) |
| 摘要: | We describe the fabrication of ultrahigh-density beta-Ga2O3 Schottky and N-doped beta-Ga2O3/beta-Ga2O3 p-n nanowire junctions via microwave plasma enhanced chemical vapor deposition and thermal chemical vapor deposition. The electron transport mechanisms with Schottky and p-n nanowire junctions were characterized by current-voltage (I-V-sd) measurements. The I-V-sd curve of different amount of the nanowires is greatly influenced by the potential barriers on the gap of Schottky nanowire junctions. N-2 plasma treatment led to rectifying electrical characteristics, suggesting that near surface was compensated by ion-induced deep-level states, which can be verified by cathodoluminescence spectrum. The current transport through p-n nanowire junctions is dominated by the deep-level-assisted tunneling mechanism for -0.8 V < V-sd < 0.6 V and by the space-charge limited conductive mechanism beyond 0.6 V. The detailed I-V-sd characteristics of the p-n nanowire junctions have been investigated in the temperature range 323-373 K. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3530787] All rights reserved. |
| 關聯: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 158 期: 3 頁數: D136-D142 |
| 顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
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