文化大學機構典藏 CCUR:Item 987654321/24123
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    題名: Synthesis of WO3 Nanorods by Thermal CVD at Various Gas Flow Rates and Substrate Temperatures
    作者: Hsieh, YT (Hsieh, Yun-Tsung)
    Chang, LW (Chang, Li-Wei)
    Chang, CC (Chang, Chen-Chuan)
    Shih, HC (Shih, Han C.)
    貢獻者: Dept Chem & Mat Engn
    關鍵詞: TUNGSTEN-OXIDE
    THIN-FILMS
    NANOPARTICLES
    EVAPORATION
    PARTICLES
    NANOWIRES
    GROWTH
    ARRAYS
    日期: 2011
    上傳時間: 2013-01-31 13:05:44 (UTC+8)
    摘要: Tungsten oxide (WO3) nanomaterials have been extensively researched for applications such as semiconductor gas sensors and photocatalysis. We have synthesized WO3 nanorods (diameters: 100-150 nm; lengths: 400-500 nm) with high yields by thermal chemical vapor deposition (CVD). In our unique two-step heating process, catalysts were not required in the temperature zone (500-600 degrees C) of substrate. It suggests the experimental conditions played a dominant role in the growth of WO3 nanorods, especially in the case of the O-2 flow rate and substrate temperature. Moreover, this relatively simple growth process can lead to effective large-scale production of WO3 nanorods. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3586784] All rights reserved.
    關聯: ELECTROCHEMICAL AND SOLID STATE LETTERS 卷: 14 期: 7 頁數: K40-K42
    顯示於類別:[化學工程與材料工程學系暨碩士班] 期刊論文

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