High T-g blue emitting materials for electroluminescent devices

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题名:	High T-g blue emitting materials for electroluminescent devices
作者:	Shen, JY;Lee, C.Y.;Huang, T.H.;Lin, J.T.;Tao, Y.T.;Chien, C.H.;Tsai, C.T.
贡献者:	化學系
日期:	2005
上传时间:	2009-10-30 14:18:00 (UTC+8)
摘要:	A series of 2',7'-di-tert-butyl-9,9'-spirobifluorene derivatives (flu) incorporating arylamines at the 2- and/or 7-positions were synthesized. These compounds possess a high glass transition temperature ranging from 135 to 215 degrees C. Incorporation of spirobifluorene was found to be beneficial for raising the glass transition temperature (T-g) of the molecules. Most of the compounds are blue emitting with good solution quantum yields. Blue-emitting double-layer devices with narrow full width at half-maximum (fwhm < 68 nm) were constructed using these materials as the hole-transporting and emitting layer, and TPBI ( 1,3,5- tris(N-phenylbenzimidazol-2-yl) benzene) as the electron-transporting layer ( device I). In double-layer devices of the configuration ITO/flu (40 nm)/Alq(3) (40 nm)/Mg : Ag(Alq(3) = tris(8-hydroxyquinoline)aluminium) ( device II), flu functioned mainly as a hole-transporting layer, and the green light characteristic of Alq3 was detected. Two of the devices of type I have very promising performance, and one of ;them emits pure blue light (CIE (x,y) = (0.15, 0.09)). One of the compounds was found to be an efficient hole-injection material.
關聯:	JOURNAL OF MATERIALS CHEMISTRY v.15 n.25 Pages: 2455-2463
显示于类别:	[化學系所] 期刊論文

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