文化大學機構典藏 CCUR:Item 987654321/24089
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    题名: Effect of passivants in energy gap of Si47X24Y36 nano-clusters: A theoretical investigation
    作者: Chen, WH (Chen, Wen-Hao)
    Chang, CH (Chang, Chih-Hsiang)
    Chang, YS (Chang, Yeong-Sheng)
    Pan, JH (Pan, Jiunn-Hung)
    Wang, HW (Wang, Houng-Wei)
    Chou, YM (Chou, Yu-Ma)
    Wang, BC (Wang, Bo-Cheng)
    贡献者: Dept Phys
    关键词: SILICON QUANTUM DOTS
    NANOCRYSTALLINE SILICON
    ELECTRONIC-STRUCTURE
    OPTICAL-PROPERTIES
    SI NANOPARTICLES
    SPECTRA
    SYSTEMS
    OXIDE
    日期: 2011-02
    上传时间: 2013-01-29 12:27:23 (UTC+8)
    摘要: Passivation on the surface of the nano-cluster Si-47 core cluster can lead to the formation of Si47X24Y36. where X and Y represent the inner and outer layer passivated positions, respectively. Accordingly, X and Y positions can accommodate one and three passivants, respectively. Herein, the density functional theory (DFT) and B3LYP method with the 6-31G(d) basis set were used to generate the electronic structures (HOMO. LUMO and energy gap between HOMO and LUMO) for two different fully passivated Si nano-clusters of Si47X60 and Si47X24Y36, both with a T-d symmetry. The optimized structures were obtained with the local density approximation (LDA) implemented in SIESTA package. For fully passivated Si47X60 nano-clusters (X=-H, -CH3, -OH, -NH2, -F, -SiH3, -SH, -CI, -C2H5 and -OCH3) alkyl passivants (-CH3 and -C2H5) affect insignificantly the calculated energy gaps while electron-withdrawing passivants give red-shifted electronic spectra. Same investigations were also conducted for the partially hydrogenated Si nano-clusters, inner layer passivated Si47X24H36 and outer layer passivated Si47H24Y36. The calculated energy gaps of Si nano-clusters with inner layer passivation (Si47X24H36) are close to that of Si47X60, both inner and outer layers passivated. Hence, the outer layer passivant effect is insignificant, which is also demonstrated by insignificant changes in energy gaps (<= 0.5 eV) for the Si nano-clusters with outer layer passivation since the difference of the Mulliken charge is <= 0.1 eV. (C) 2010 Elsevier B.V. All rights reserved.
    關聯: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 卷: 43 期: 4 頁數: 948-953
    显示于类别:[光電物理系] 期刊論文

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