Effect of preheating process on crystallization and optical properties of sol-gel derived ZnO semiconductor thin films

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 化學工程與材料工程學系暨碩士班 > 期刊論文 > Item 987654321/24025

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題名:	Effect of preheating process on crystallization and optical properties of sol-gel derived ZnO semiconductor thin films
作者:	Tsay, CY (Tsay, Chien-Yie) Fan, KS (Fan, Kai-Shiung) Chen, CY (Chen, Chin-Yi) Wu, JM (Wu, Jyh-Ming) Lei, CM (Lei, Chien-Ming)
貢獻者:	Dept Chem & Mat Engn
關鍵詞:	Transparent oxide semiconductor;ZnO thin films;Sol-gel method;Morphology;Optical properties
日期:	2011-06
上傳時間:	2013-01-17 14:18:15 (UTC+8)
摘要:	Highly transparent ZnO semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin coating process. This research investigated the effects of different preheating rates (4 or 10A degrees C/min) on the various surface morphologies, crystallization characteristics, and optical properties of these thin films. The ZnO sol was synthesized by dissolving the zinc acetate dihydrate in isopropanol (IPA), and then adding monoethanolamine (MEA). These as-coated films were preheated at 300A degrees C for 10 min and annealed in an air ambiance at 500A degrees C for 1 h. Experimental results revealed that the as-prepared films had a hexagonal wurtzite structure, and that the heating rates of the preheating process obviously affected the surface morphologies, crystallization qualities, and transparency levels of the thin films. A ZnO thin film preheated at 10A degrees C/min exhibited preferential orientation along the (002) plane, a flat surface, and also achieved a high transmittance value, 92.5%, for light with a wavelength of 550 nm.
關聯:	JOURNAL OF ELECTROCERAMICS Volume: 26 Issue: 1-4 Pages: 23-27
顯示於類別:	[化學工程與材料工程學系暨碩士班] 期刊論文

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