Modeling, Simulation and Device Fabrication of Schottky Diodes

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题名:	Modeling, Simulation and Device Fabrication of Schottky Diodes
作者:	曾俊傑朱奉昇林嘉洤
贡献者:	工學院
关键词:	蕭特基二極體傳輸線
日期:	2002-06-01
上传时间:	2012-05-09 15:18:36 (UTC+8)
摘要:	爲了能預期蕭特基二極體在金半接面下的電特性以得到較佳的效能，許多電路模型已經發展，相關的文章也持續的被發表。本篇論文提出一新的等效電路模型，利用此模型建立蕭特基二極體等效電路並加以模擬，模擬的曲線近似於實驗量測所得的結果。 In order to predict the electrical behavior of Schottky diodes, a large number of modeling and simulation have been presented. A novel transmission line modeling and its equivalent circuit of Schottky diode are developed in this paper. A SPICE code is written to describe this model and the simulation can be executed by WINSPICE program. Schottky diodes are fabricated and the I-V characteristics are measured. The measured I-V curves are obtained from HP4156A and compared to the simulated I-V data. The results show that the measured I-V curves are in good agreement with the simulation results based on the transmission line modeling.
關聯:	華岡工程學報 16期 p.175 -189
显示于类别:	[工學院] 學報-華岡工程學報

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