文化大學機構典藏 CCUR:Item 987654321/22217
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    Please use this identifier to cite or link to this item: https://irlib.pccu.edu.tw/handle/987654321/22217


    Title: 以電漿濺鍍技術製備電致色變薄膜及其性能之研究
    Authors: 陶惟翰
    田曜璋
    楊正旭
    林永森
    Contributors: 工學院
    Keywords: 電漿濺鍍
    循環伏安
    Electrochromic Thin Film
    Plasma Sputtering
    Cyclic Voltammetry
    電致色變薄膜
    Date: 2003-06-01
    Issue Date: 2012-05-09 14:24:22 (UTC+8)
    Abstract: 本文使用磁控式電漿濺鍍技術製備變色層,輔助變色層及離子傳導層於導電玻璃基材上。當變色層薄膜物質(如氧化鎢或氧化鎳),被施加外加電位時,呈現出可逆性化學反應,並表現出兩種不同顏色變化之光學性質。主要工作以磁控式電漿濺鍍技術製備變色層及輔助變色層,探討離子傳導層與變色層間電荷平衡設計;同時並製備離子傳導層,研究其相關特性爲將來元件的製備。此電漿濺鍍之操作參數爲供給電源型式(DC或RF)、輸出功率、基材與靶材距離與濺鍍時問等不同條件製備。製備之薄膜使用循環伏安儀、電子光譜化學分析作特性量測,並測試各種製備之薄膜電化學變色反應特性與充放電荷量之平衡,以尋求元件最佳操作條件達到良好穩定特性與耐久性質。

    In this paper, an electrochromic thin film, which is characterized by its ability to sustain reversible and persistent changes of the optical properties when a voltage is applied to it, was prepared by plasma sputtering technology. The WO3 and NiO materials were used as the electrochromic thin film and the most promising candidate for electrochromic devices that can vary the throughput of visible light and solar energy and is called the smart windows.
    The prepared electrochromic thin film, the design of charge balance, the lifetime measurement and the coloration efficiency of the electrochromic devices were experimentally investigated. Many experimental and operational parameters, which are DC or RF power generator, powers, operation pressures, operation gases and the ratio of mixture, gas flow rate various target compositions, distance between sample and target and electrode design, sputtering time were used to design the electrochromic thin film by plasma sputtering technology. The prepared electrochromic thin film was experimentally tested by using the spectroscopy and cyclic voltammetry in order to get the optimum operation conditions.
    Relation: 華岡工程學報 17期 p.117 -132
    Appears in Collections:[College of Engineering] Chinese Culture University Hwa Kang Journal of Engineering

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