磷化銦鎵／砷化銦鎵／砷化鎵假型高電子遷移率電晶體之模擬與研究

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题名:	磷化銦鎵／砷化銦鎵／砷化鎵假型高電子遷移率電晶體之模擬與研究
作者:	林嘉洤楊柏宇
贡献者:	工學院
关键词:	假型高速移導率電晶體二維電子雲調變式摻雜單原子層摻雜 PHEMT 2DEG modulation-doping delta-doping
日期:	2004-06-01
上传时间:	2012-04-25 13:57:18 (UTC+8)
摘要:	本論文以化合物半導體材料－砷化鎵(GaAs)為基材，提出於製作單通道異質結構場效電晶體時之設計準則。使用Medici探討元件以single delta-doping方式摻雜與不同結構設計對元件性能的提昇。砷化鎵假型高電子遷移率電晶體(GaAs PHEMT)在軍事及微波通訊的運用上都是非常重要的。在本論文所研究的砷化鎵假型高電子遷移率電晶體包含：調變式摻雜砷化鋁鎵／砷化銦鎵假型高電子遷移率電晶體、單原子層摻雜砷化鋁鎵／砷化銦鎵假型高電子遷移率電晶體及單原子層摻雜磷化銦鎵／砷化銦鎵假型高電子遷移率電晶體。利用TMA MEDICI二維元件模擬軟體，模擬及分析元件以調變式摻雜(modulation-doping, MD)和單原子層摻雜(delta-doping, DD)等不同摻雜型式之異質結構。由模擬結果顯示，以InGaP/InGaAs delta-doping方式摻雜之異質結構，能夠使元件電流分佈更加均勻、較大的操作範圍、較高的汲極飽和電流、較高的崩潰電壓、較高的二維電子雲(two dimensional electron gas, 2DEG)密度，與較高的轉移電導值(transconductnace)。除此之外，在摻雜的電子提供層與無摻雜的InGaAs之間放置一層無摻雜且薄的隔離層(spacer layer)，增加解離雜質與載子之間的間隔，會降低解離雜質與載子之間的庫侖交互作用力，使電子遷移率進一步上升。 The structures of single channel heterostructure transistors based on compound semiconductor materials are studied. By means of the simulation tool of Medici. single delta-doping with different structures and doping concentrations are simulated and analyzed. GaAs PHEMT device is one of the most important devices in military and microwave communication applications. Three kinds of PHEMT structures are developed and studied, including modulation-doping AlGaAs/InGaAs pseudomorphic high electron mobility transistors, single delta-doping AlGaAs/InGaAs pseudomorphic high electron mobility transistors, and single InGaP/InGaAs delta-doping pseudomorphic high electron mobility transistors. By means of the simulation tool of Medici, modulation doping and Si delta-doping with different doping profiles are analyzed and simulated. The study results show that double delta-doping layers enhances the uniformity of the distribution of the electric current, and in the meantime , a large operation range, a higher current density, a higher breakdown voltage, a higher density of two dimensional electron gas, and a high transconductance can be obtained. In addition, a undoped spacer layer can be placed between the doped barrier layer and the undoping InGaAs. The results are also show that the larger separation between the carriers and ionized donors the higher the electron mobility, owing to the less coulomb interaction.
關聯:	華岡工程學報 18期 p.89 -94
显示于类别:	[工學院] 學報-華岡工程學報

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