Simulation with a Multi-MOS Model for Power Semiconductor Devices

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Title:	Simulation with a Multi-MOS Model for Power Semiconductor Devices
Authors:	高家雄曾俊傑李豐明沈征
Contributors:	工學院
Keywords:	Power semiconductor devices integrated IGBT current sensors SPICE3 multi-MOS model equivalent circuit model
Date:	2004-06-01
Issue Date:	2012-04-25 12:56:14 (UTC+8)
Abstract:	在半導體物理中電子和電洞濃度依其位點而有變動的現象是顯而易見的事。然而，目前已有的分析模型幾乎都不考慮這個問題，因此無法分辨活動性，雙載子電晶體，和金氧半導體(MOS)之間的不同。本文建構了一個結合多捆MOS的新等效電路模型來模擬絕緣閘極雙載子電晶體(IGBT)電流感應器。本模型可以同時考慮IGBT內電子和電洞電流，以及MOS內摻雜濃度的變化。本模擬利用SPICE3的演算模擬三種電流感應器，也則活動性，雙載子電晶體，和金氧半導體的電性，所得結果與電流感應測試結果相當吻合。 Both electron and hole concentrations vary within the semiconductor physics. However, most analytical models existing today do not consider this problem, thus fail to distinguish between the active, bipolar, and MOS structures. In this paper a new equivalent circuit model is constructed within a multi-MOS model for simulation of IGBT (Insulated Gate Bipolar Transistor) current sensors. It takes into account both electron and hole currents in IGBTs and the doping variation in MOS body. The simulation is conducted with SPICE3 for three types of current sensors, namely active, bipolar, and MOS current sensors. The results agree well with the current sensing measurement.
Relation:	華岡工程學報 18期 p.1 -9
Appears in Collections:	[College of Engineering] Chinese Culture University Hwa Kang Journal of Engineering

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