閘極氧化層以鉿化合物取代二氧化矽之CMOS元件特性探討

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Title:	閘極氧化層以鉿化合物取代二氧化矽之CMOS元件特性探討
Authors:	陳蕙質;陳思羽;劉允中;邱琦清;朱明毅;譚湘瑜
Contributors:	工學院
Keywords:	高介電層鉿化合物 ISE-TCAD High-k dielectric FfO2 ISE-TCAD
Date:	2008-06-01
Issue Date:	2012-04-11 14:38:42 (UTC+8)
Abstract:	本專題研究就是利用CMOS元件模擬，當閘極長度為90nm時，使用含鉿(Hafnium)的high-k材料閘極氧化層，探討high-k材料與二氧化矽(SiO2)間的比較，藉由不同的特性如：Id-Vg、Id-Vd及C-Vg。傳統的二氧化矽(SiO2)閘極氧化層在90nm 以下會慢慢出現一些問題，在閘極長度越來越小時，閘極氧化層厚度也會越來越小，因此當閘極氧化層厚度逐漸降低會使得漏電流變大，此時就會產生所謂的電流穿透現象(tunneling effect)。本實驗使用ISE-TCAD這套軟體來做元件模擬，將傳統的閘極氧化層材料二氧化矽(SiO2)改成高介電常數(high-k)的材料來做模擬，並且改變閘極氧化層厚度，從而得知改變後所產生的不同特性，由改變閘極氧化層材料與閘極電壓的方式對元件性能的提升，得知是否有效改善漏電流的問題。鉿化合物用來取代原先半導體上常用的二氧化矽絕緣材料，可大幅減低其晶片厚度，使用後可以讓摩爾定律的失效期繼續延後。 The increasing of gate leakages current, caused by direct tunneling in ultra oxide films, is the crucial factor eliminating conventional SiO2-based gate oxide in sub-90 nm CMOS technology development. In this work, we use hafnium oxide as MOS dielectric when the gate length is 90 nm, and compare the high-k material with SiO2 in different electrical characters, such as capacitance-voltage (C-V), current-voltage (I-V) measurement. This work used ISE-TCAD to simulate CMOS devices. We use high dielectric constant in replacing SiO2 as the gate oxide, and change the gate oxide thickness to know the different characters.
Relation:	華岡工程學報 22期 p.241 -244
Appears in Collections:	[College of Engineering] Chinese Culture University Hwa Kang Journal of Engineering

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