| 摘要: | 當CMOS元件縮減到奈米尺寸的等級之後，利用複晶矽(poly-Silicon)作為CMOS元件之閘極主要材料的技術已經遇到了一個瓶頸，因為高阻值及閘極空乏效應變成很大的問題，所以必須找尋新的材料來取代複晶矽，而使用金屬閘極，可能是唯一的解決辦法，金屬閘極具有低電阻的特性，而且不會產生空乏效應，但是因為目前金屬閘極仍然有許多問題有待克服，目前利用與金屬閘極特性最為接近的矽化鎳(NiSi)矽化金屬替代金屬閘極。本專題研究當CMOS在不同閘極長度下，利用新的閘極材料(NiSi)取代傳統複晶矽(poly-Silicon)，閘極氧化層材料仍為現今常用之二氧化矽(SiO2)材料，藉由改變其閘極通道長度來探討對元件的特性影響。研究中使用ISE-TCAD這套軟體來做元件模擬，將完全矽化鎳閘極來取代金屬閘極來做模擬，從而得知改變後所產生的不同特性，從改變金屬閘極與電壓的方式對元件性能的提升，得知能否有效改善原本金屬閘極多損耗並與高介電常數(high-k)材料不相容等問題。
When CMOS nanometer technology came, because of poly-Silicon has high resistivity and depletion effect, we have to find new materials to replace poly-Silicon gate. Metal gate might be the only way to solve these problems. It has some advantages over poly-Si gate, such as no poly-Si depletion effect, and has low gate resistivity. Because metal gate still has many problems that have to be overcome, now we use NiSi which character is the most approach to metal gate to replace it. In this work, we use NiSi gate to replace poly-Silicon gate, the gate oxide's material is still SiO2, and investigate the characteristics when CMOS in different gate lengths. This work used ISE-TCAD to simulate CMOS devices. We use Ni-FUSI gate as metal gate. Changing the gate length and the voltage to know whether it can improve the problems about metal gate have, such as power dissipation and hardly compatible with high-k. |
