| 摘要: | 本文旨在研究N型矽晶片經過陽極電化學蝕刻後，產生的多孔矽結構與各種特性做分析及應用。實驗利用自製的PVC電化學蝕刻槽與白鐵線圈，取代傳統昂貴的鐵氟龍陽極電化學蝕刻槽與白金線，將矽晶片蝕刻成具有非常微小孔洞之多孔矽晶片，並用紫外光燈觀察其光激發光現象，可清楚看見多孔矽晶片光激發光產生明顯的橙紅色光，再使用掃描式顯微鏡(SEM)和反射率去觀察其多孔矽結構。實驗證明多孔矽經電化學蝕刻後所產生，並且由許多結構非常細小之矽柱所構成，如電壓密度、蝕刻溶液濃度及外加照光等，可以改變多孔隙結構及其反射率。此外，我們也發現多孔矽表面若增加一層ITO，將會使發光的光譜產生藍移現象。
In this study, the fabrication process, structure analysis of porous silicon and its applications are investigated. The iron coil and PVC materials are used to form a HF electrolyte container. Optical microscopy and reflectance are measured on the porous silicon. Also, the Photo-response of UV light excitation are researched. The electrical characteristics of the porous silicon with metal contacts are analyzed. In addition, the photolumin properties method of different porous silicon structures are proposed. Excellent experiment results are obtained. Such, a new type of Si-based heterostructure is obtained by electrochemical oxidation of monocrystalline silicon in concentrated hydrofluoric acid solutions. The different porous silicon structure can be obtained with properly variations of etching parameters such as current density, concentration of etching solvent and light illumination during etching process. In addition, it is found that the ITO coating would blue-shift the photolumin |
