In this study, magnetic domain structures of the semiconductor nanostructures (Ge, Si) were studied by magnetic force microscope (MFM). The distinct differences on the domain structures in MFM images were observed due to the non-traditional ferromagnetic nature of the semiconductor nanostructures. From previous experimental results, it was shown that the soft magnetism of semiconductor nanostructures was heavily affected by the measurement procedure. By using different (hard and soft) magnetic tips and applying parallel fields to the sample, we have tried to obtain the exact domain structures and avoid the noise originating from measurement and magnetic tip. With hard magnetic tips, magnetic domains were widened after sometime. However, wide domain structures were always observed with partial atomic force contributions by using soft magnetic tips. By varying the external magnetic fields, the back and forth moved domain patterns were observed. We have also compared with different samples in order to find the true magnetic domain structures.
