The anodization electrochemistry etching is studied on the silicon based substrates by SEM and AFM. Porous silicon structure is fabricated in Teflon container with HF and alcohol mixture solutions. By SEM and AFM, the top view and cross section view can be observed and compared. It is found that the higher HF concentration would cause a deeper porous silicon film. In addition, the higher anodization current density would result in a rough surface. Besides, the hydrogen bubble influences the formations of porous thin film and its film quality. Its related properties are discussed in the paper.
