| 摘要: | 本研究以n型矽晶片經陽極電化學蝕刻後，表面多孔矽薄膜之深淺與材料特性分析。本實驗中使用最佳參數蝕刻n型晶片，以掃瞄式電子顯微鏡(SEM)觀察其結構及深度，依照孔隙多寡可簡單將其分為三層結構，再利用掃描式光激發光光譜儀(Maple PL)檢測不同結構下之強度與波長，最後以3D表面輪廓儀(Micro-figure Measuring Instrument)觀察其段差與SEM相對照。
實驗中發現，多孔矽層(Porous silicon layer, PSL)中，發光強度隨孔隙的減少而下降，但是波長都為同一位置，此發現有利於多孔矽粉末應用研究。
In this work, the material characteristics of the n-type silicon wafer with wet-etching technology of electrochemical anodization were proposed. The experiments including film thickness and properties of fabricated surface porous silicon were measured. Through a suitable etching-parameter, a studied sample with triple-layer structure which consisting of diverse pores was obtained and measured by SEM measurement. For clarifying this structure, the surface profile and photoluminescence characteristics which including wavelength and intensity for each porous-layer of fabricated triple-structure were measured by 3D-Profiler (Micro-Figure Measuring Instrument) and Maple-PL, respectively.
The experimental results indicated that the light emission intensity of fabricated porous silicon layer would be decreased with decrease in pores. Furthermore, we observed a particular trend that the measured wavelength points according to the intensity peak were identical for each thickness of studied porosity. This phenomenon would be a useful viewpoint in further material analysis of the porous silicon powder. |
