Investigating the Dielectric Property of Abnormal Grain Growth Hexagonal BaTiO(3)

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 化學工程與材料工程學系暨碩士班 > 期刊論文 > Item 987654321/21035

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Title:	Investigating the Dielectric Property of Abnormal Grain Growth Hexagonal BaTiO(3)
Authors:	Lei, CM (Lei, Chien-Ming) Lee, SW (Lee, Shu-Wei)
Contributors:	化材所
Keywords:	Hexagonal BaTiO(3) evanescent microwave microscope scanning probe technology (EMP) abnormal grain growth (AGG) Qxf value Ga-doping BaTiO(3)
Date:	2009
Issue Date:	2011-12-12 15:01:42 (UTC+8)
Abstract:	In this work, the structural and dielectric properties of hexagonal BaTiO(3) have been investigated. The samples are partially doped with Ga(3+) at Ti site to stabilize the hexagonal structure at room temperature. The abnormal grain growth (AGG) is observed on h-BaTi(1-x)Ga(x)O(3) samples at a higher sintering temperature. The Qxf values can be improved by Ga-doping in BaTiO(3). By the evanescent microwave microscope scanning probe technology (EMP), it is found that the regions of the abnormal growth grains have the higher K-value than that of the normal growth grains. The K-value and Qxf value can be concurrently enhanced of the h-BaTi(1-x)Ga(x)O(3) samples with AGG have been reported.
Appears in Collections:	[化學工程與材料工程學系暨碩士班] 期刊論文

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