In this work, the structural and dielectric properties of hexagonal BaTiO(3) have been investigated. The samples are partially doped with Ga(3+) at Ti site to stabilize the hexagonal structure at room temperature. The abnormal grain growth (AGG) is observed on h-BaTi(1-x)Ga(x)O(3) samples at a higher sintering temperature. The Qxf values can be improved by Ga-doping in BaTiO(3). By the evanescent microwave microscope scanning probe technology (EMP), it is found that the regions of the abnormal growth grains have the higher K-value than that of the normal growth grains. The K-value and Qxf value can be concurrently enhanced of the h-BaTi(1-x)Ga(x)O(3) samples with AGG have been reported.
