Four elements of Ti, Fe, Co and Ni were selected to produce
TiXFeCoNi (x=0、0.25、0.5、0.75 and 1) alloy target in this study. The thin
films were produced by the vacuum DC sputtering technique. Then, the
TiXFeCoNi thin films were vacuum annealed at 1000°C for 30 min, and
these thin films became to metal oxide films because the air still leaked
into the vacuum furnace during annealing. This thesis investigated the
microstructures and electric properties of as-deposited and as-annealed
TiXFeCoNi thin films. Also, placing these oxide films under the sunlight
and ultraviolet (UVA、UVB、UVC) to observe their photoconductivity.
The microstructures of the TiXFeCoNi thin films were analyzed by
field-emission scanning electron microscope (FE-SEM). Their
resistivities were measured by four-point probe method.
In this paper, the most importation result is the resistivity of the
TiXFeCoNi oxide thin films could be significantly decreased by sunlight.
In addition, ultraviolet (UVA and UVB) did not influence the resistivity
of these oxide thin films; but the ultraviolet UVA had some effect to
decrease the resistivity of the TiFeCoNi oxide film.
