| 摘要: | 本實驗成功利用熱蒸鍍法合成出摻雜錫之氧化銦奈米棒、氧化銦奈米塔與氧化銦錫奈米棒。我們透過場發射掃描式電子顯微鏡(FESEM)觀察其表面形貌，再使用穿透式電子顯微鏡(TEM)以及X光繞射分析儀(XRD)分析其晶體結構和成長方向，可以發現微量摻雜錫元素並不影響主體氧化銦的結構。而使用能量散佈光譜儀(EDS)和X光光電子能譜儀(XPS)作成分的鑑定，證明氧化銦奈米棒內部確實有錫摻雜。
最後以陰極激發光光譜儀(CL)與電流-電壓(I-V)曲線的量測作光電性質上的分析，發現氧化銦錫奈米棒CL發光位置上有藍移現象，再次證實氧化銦奈米棒內部有錫的摻雜。而在電性量測結果上我們得知氧化銦錫奈米棒比氧化銦奈米棒、氧化銦奈米塔的導電性更好，其氧化銦錫奈米棒的電阻值為0.063千歐姆；氧化銦奈米棒的電阻值為1.32千歐姆；氧化銦奈米塔的電阻值為0.65千歐姆。
In this study, indium oxide nanorods, indium oxide nanotowers and indium tin oxide nanorods(ITO) have been successfully synthesized by thermal evaporation. Using field emission scanning electron microscope (FESEM) to observe the surface morphology, and using transmission electron microscopy (TEM) and x-ray diffraction (XRD) to analyze the crystal structure and growth direction ,we found that the main structure of indium oxide hardly changed when slight tin was doped in. The use of energy dispersive spectroscopy (EDS) and x-ray photoelectron spectroscopy (XPS) for the materials identification, can prove that the indium oxide nanorods are within the tin doping limit.
Finally, cathodoluminescence (CL) and current - voltage (IV) curve for the measurement of optical properties of the analysis, we found indium tin oxide nanorods showing a blue shift in the CL spectrum, and once again confirming that indium oxide nanorods have been doped with tin. The resulting electrical measurements showed that the conductivity of indium tin oxide nanorods is the best among indium oxide nanorods and indium oxide nanotowers, the resistance value of indium tin oxide nanorods is 0.0063 kΩ, the resistance value of indium oxide nanorods is 1.32 kΩ, and the resistance value of indium oxide nanotowers is 0.65 kΩ. |
