In this study, indium oxide nanorods, indium oxide nanotowers and indium tin oxide nanorods(ITO) have been successfully synthesized by thermal evaporation. Using field emission scanning electron microscope (FESEM) to observe the surface morphology, and using transmission electron microscopy (TEM) and x-ray diffraction (XRD) to analyze the crystal structure and growth direction ,we found that the main structure of indium oxide hardly changed when slight tin was doped in. The use of energy dispersive spectroscopy (EDS) and x-ray photoelectron spectroscopy (XPS) for the materials identification, can prove that the indium oxide nanorods are within the tin doping limit.
Finally, cathodoluminescence (CL) and current - voltage (IV) curve for the measurement of optical properties of the analysis, we found indium tin oxide nanorods showing a blue shift in the CL spectrum, and once again confirming that indium oxide nanorods have been doped with tin. The resulting electrical measurements showed that the conductivity of indium tin oxide nanorods is the best among indium oxide nanorods and indium oxide nanotowers, the resistance value of indium tin oxide nanorods is 0.0063 kΩ, the resistance value of indium oxide nanorods is 1.32 kΩ, and the resistance value of indium oxide nanotowers is 0.65 kΩ.
