| 摘要: | 本研究使用磁控濺鍍機(Magnetron Sputter)在藍寶石基板(Sapphire)鍍上不同的催化劑(鎳、金)，以化學氣相沈積法(Chemical Vapor Deposition, CVD)將基板與鋁粉(Al powder 99.97%)放入高溫爐與氨氣(NH3)反應，以氣-液-固(Vapor-Liquid-Solid, VLS)機制，在藍寶石基板上生長出氮化鋁奈米線，並調變持溫時間(15分鐘，30分鐘，60分鐘)及持溫溫度(1100℃、1200℃、1300℃) 去探討氮化鋁奈米線生長製程。
我們使用掃描式電子顯微鏡(Scanning electron microscope, SEM)分析奈米線，氮化鋁奈米線的直徑約50~150奈米，線長約幾十微米長。由穿透式電子顯微鏡(transmission electron microscope, TEM)與選區繞射(SAED)做結構分析，得知氮化鋁奈米線為複晶型態。成分的檢測方面則藉由能量散射光譜儀(Energy Dispersive Spectrometer, EDS)做元素定量的分析。X光繞射分析儀(X-ray Diffraction, XRD)與拉曼光譜裝置做晶格結構分析。最後再以光激螢光光譜(photoluminescence spectrum, PL)分析樣品的光學特性，顯示出氮化鋁奈米線的發光位置在3.0eV為主要的發光位置。本研究以一系列的探討，找出氮化鋁奈米線最佳的生長參數為持溫時間30分鐘，持溫溫度1200℃，使用鎳當做催化劑，以化學氣相沉積(Chemical Vapor Deposition, CVD)生長機制搭配自然降溫法，可生長出大面積且高品質的氮化鋁奈米結構。
關鍵字：氮化鋁、奈米線、化學氣象沉積、光激螢光
This study for the production of aluminum nitride nanowires, using some metal (nickel, gold) coated on sapphire by magnetron sputtering. Then we growth AlN nanowires using Chemical Vapor Deposition (CVD), and the substrate and aluminum (Al powder 99.97%) into the high-temperature furnace and ammonia (NH3) reaction by vapor - liquid - solid (VLS) mechanism, the sapphire substrate grown AlN nanowires, and modulation reaction time (15 minutes, 30 minutes, 60 minutes) and the reaction temperature (1100℃, 1200℃, 1300℃) to explore the aluminum nitride nanowire growth process.
The morphology was analyzed by field emission scanning electron microscopy (FE-SEM),The size of the AlN nanowires are 50-150 nm in diameters and several μms in lengths.High resolution transmission electron microscopy (HR-TEM) and selection diffraction (SAED) patterns of AlN nanowires showed that it is single-crystalline structure.The structures and component were characterized by means of X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS).Using the photoluminescence spectrum (PL) analysis of the AlN nanowires optical properties.
Keyword: AlN,nanowires, CVD, PL |
