資料載入中.....
|
請使用永久網址來引用或連結此文件:
https://irlib.pccu.edu.tw/handle/987654321/24322
|
| 題名: | Synthesis of SnO2-ZnO Core-Shell Nanowires and Their Optoelectronic Properties |
| 作者: | Pan, KY (Pan, Ko-Ying)
Lin, YH (Lin, Yu-Hung)
Lee, PS (Lee, Po-Sheng)
Wu, JM (Wu, Jyh-Ming)
Shih, HC (Shih, Han C.) |
| 貢獻者: | Inst Mat Sci & Nanotechnol |
| 關鍵詞: | ATOMIC LAYER DEPOSITION
PHOTON-SENSING PROPERTIES
ZNO NANOWIRES
GAS
NANORODS
SENSORS |
| 日期: | 2012 |
| 上傳時間: | 2013-02-26 10:20:37 (UTC+8) |
| 摘要: | Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD). The diameter of SnO2-ZnO core-shell nanowires is 100 nm by ALD 200 cycles. The result of electricity measurements shows that the resistance of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 925 Omega, which is much lower than pure SnO2 nanowires (3.6 x 10(6) Omega). The result of UV light test shows that the recovery time of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 328 seconds, which is lower than pure SnO2 nanowires (938 seconds). These results demonstrated that the SnO2-ZnO core-shell nanowires have potential application as UV photodetectors with high photon-sensing properties. |
| 關聯: | JOURNAL OF NANOMATERIALS 文獻號碼: 279245 |
| 顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
|
文件中的檔案:
| 檔案 |
描述 |
大小 | 格式 | 瀏覽次數 |
|---|
| index.html | | 0Kb | HTML | 378 | 檢視/開啟 |
|
在CCUR中所有的資料項目都受到原著作權保護.
|
