| Title: | A new equivalent circuit model of IGBT for simulation of current sensors |
| Authors: | Kao, C.H.;Tseng, C.C.;Lee, F.M.;Shen, Z.J. |
| Contributors: | 材料科學與奈米科技研究所 |
| Date: | 2005 |
| Issue Date: | 2009-10-30 13:10:38 (UTC+8) |
| Abstract: | A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multiMOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%. |
| Relation: | IEEE TRANSACTIONS ON POWER ELECTRONICS v.20 n.4 Pages: 725-731 |
| Appears in Collections: | [Department of Chemical & Materials Engineering] journal articles
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