本論文是延續本實驗室先前畢業楊雅筑及吳律頤之有關TiFeCoNi合金薄膜微結構及導電性，濺鍍用靶材設計目的是改用活性與Ti接近的Al，以及以耐氧化性較佳的Cr取代Ti；另一個是改變FeCoNi的組成比例，即TiFeCoNi改為TiCo1.5Ni1.5合金。再利用高真空直流濺鍍機來製備薄膜，同樣使用真空熱處理條件探討薄膜微結構是否會有與TixFeCoNi相似的結果以及各種性質的影響。
本論文使用材料為AlFeCoNi、CrFeCoNi、TiCo1.5Ni1.5合金靶材，將試片施以500°C ~1000°C不同溫度下之真空熱處理，再挑選出較佳電阻的退火條件，作更進一步的時效曲線。薄膜性質分析包括X光繞射、掃瞄式電子顯微鏡與穿透式電子顯微鏡作微結構觀察，利用四點探針法量測電阻率。由X光繞射分析結果，可以得知各薄膜在初濺鍍狀態下並無明顯的繞射峰，顯示此薄膜接近奈米晶結構。處理後，可以得到FCC結構之薄膜。
本論文發現將AlFeCoNi薄膜置於真空高溫爐中施以800°C-30分鐘的熱處理後有最低電阻值15μΩ-cm。低於文獻中TiFeCoNi 的35 μΩ-cm[1]與其他陶瓷材料相比，低於ITO的電阻(170μΩ-cm)，而達到目前RuO2氧化物在室溫下的最低電阻(35 μΩ-cm)。AlFeCoNi氧化物薄膜經過4小時的熱處理後，電阻並無明顯的改變，其熱穩定性質良好。
We use the AlFeCoNi、CrFeCoNi、TiCo1.5Ni1.5 alloy target deposited the thin films in this paper. Then, some of the thin films were vacuum annealed at high temperature for investigating the effects of annealing conditions on their electrical resistivity. The annealing temperatures were from 500℃ to 1000℃.
The microstructure of the thin films were analyzed by X-ray diffraction, scanning electron microscopy and transmission electron microscopy；their resistivities were measured by four-point probe. The results indicated that the as-deposited thin film had an amorphous structure. All of these films would transform to FCC structure after vacuum annealed at high temperatures.
Results indicated the lowest resistivity of the alloy oxide thin film was the AlFeCoNi oxide thin film, and its resistivity was 15μΩ-cm after annealed at 800°C for 30min. This value is not only lower than ITO (150μΩ-cm) and RuO2 single crystal (35μΩ-cm), but also lower than our previous studies on the TixFeCoNi oxide thin films. Moreover, AlFeCoNi oxide films had good thermal stability, because its resistivity did not change significantly after annealed for 4 hours.
